Samsung Delivers HBM3E Memory Samples: 1.2TB/s Bandwidth
Samsung Delivers HBM3E Memory Samples: 1.2TB/s Bandwidth
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Samsung Delivers HBM3E Memory Samples: 1.2TB/s Bandwidth Equals Instant Streaming of Hundreds of Movies
According to reports from South Korean media today, Samsung has officially named its fifth-generation HBM3E product “Shinebolt,” as it accelerates its efforts in HBM3E development and marketing, aiming to catch up with SK Hynix in this field.
HBM, which stands for High Bandwidth Memory, represents a high-value, high-performance product that significantly improves data processing speed compared to traditional DRAM. Due to its performance advantages, HBM is often considered the future of DRAM memory in the age of artificial intelligence.
The HBM DRAM series has evolved from HBM (first generation), HBM2 (second generation), HBM2E (third generation), HBM3 (fourth generation), to HBM3E (fifth generation), with HBM3E being an extended version of HBM3.
Sources revealed that Samsung has commenced providing Shinebolt samples to customers for quality testing. These samples have specifications of 8 layers and 24GB. Additionally, Samsung is on track to complete the development of a 12-layer, 36GB product in the near future.
Compared to HBM3, Shinebolt boasts a 50% increase in maximum data transfer speed (bandwidth), reaching 1.228TB/s. This is equivalent to transferring 230 full HD movies, each with a size of 5GB, in just one second.
A key aspect of HBM technology is the method of connecting each layer. Samsung has consistently employed a non-conductive thin-film process known as TC-NCF (Thermal Compression Non-Conductive Film) from the inception of HBM production. In contrast, its long-time competitor, SK Hynix, utilizes the MR-MUF (Mass Reflow Mold Underfill) process. The relative merits of these methods will ultimately be determined by the market.
Having fallen behind SK Hynix in the development and production speed of HBM, Samsung is now strategizing to regain market positioning. One of its main tactics involves accelerating the development of a “hybrid bonding” process that could potentially reshape the rules of HBM technology.
